Dielectric Properties of Thin Tantalum Oxide Layers at Solid Tantalum Capacitors

DOI

10.2991/cisia-15.2015.238How to use a DOI?

Keywords

thin oxide film; dielectric properties; Havriliak–Negami (HN) equation; electrical conductivity

Abstract

In this paper MIS (Metal-Insulator-Semiconductor) Ta2O5 capacitor has been studied in terms of dielectric relaxation with a low frequency dielectric spectroscopy. The results acquired for Ta2O5 show a relaxation peak in the temperature and frequency range available, 187 K – 385 K, 1 Hz – 10 MHz. The loss peak frequency follows the Arrhenius law dependence with the activation energy of 0.048 eV. In conductivity spectra, Ta2O5 film exhibits a steady–state value at low frequencies and a monotonous increase at high frequencies depending on temperature. The observed conductivity followed a slightly superlinear power law.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - I. Abuetwirat
AU  - K. Liedermann
PY  - 2015/06
DA  - 2015/06
TI  - Dielectric Properties of Thin Tantalum Oxide Layers at Solid Tantalum Capacitors
BT  - Proceedings of the International Conference on Computer Information Systems and Industrial Applications
PB  - Atlantis Press
SP  - 889
EP  - 891
SN  - 2352-538X
UR  - https://doi.org/10.2991/cisia-15.2015.238
DO  - 10.2991/cisia-15.2015.238
ID  - Abuetwirat2015/06
ER  -