The Application of Two-Dimensional Semiconductor Materials in Digital Integrated Circuits

DOI

10.2991/978-94-6463-864-6_11How to use a DOI?

Keywords

2D Semiconductors; Digital Integrated Circuits; Transistors; Heterostructures; Contact Resistance

Abstract

Two-dimensional semiconductors are redefining the landscape of digital integrated circuits (ICs) by leveraging their atomic-scale thickness, exceptional carrier mobility (>200 cm2/V·s), and layer-dependent bandgap tunability. These properties directly address silicon’s limitations, particularly short-channel effects at sub-5-nm nodes, by enabling superior electrostatic control. Their ultrathin architecture facilitates ballistic transport, minimizing scattering-induced energy loss, and supports the integration of van der Waals heterostructures (e.g., MoS₂/WSe₂ vertical junctions), which exhibit type-II band alignment for ultrafast switching (>300 GHz). Innovations such as sub-1-nm gate-length transistors achieve ON/OFF ratios exceeding 10⁶, while 3D monolithic stacking and edge-contact engineering reduce operating voltages to < 0.1 V and power densities to < 0.1 nW/μm2. However, transitioning from lab-scale breakthroughs to industrial adoption requires overcoming critical challenges: non-uniform wafer-scale synthesis via chemical vapor deposition (CVD), interfacial defect densities (>101⁰ cm⁻2·eV⁻1), and contact resistance (>1 kΩ·μm). Recent advances in selective-area epitaxy, alloyed metallization (e.g., Ni-InSe interfacial layers), and h-BN encapsulation have lowered contact resistance to 200 Ω·μm, enhancing drive currents to ~ 500 μA/μm. To realize scalable production, synergistic co-optimization of defect-free growth techniques, atomically precise device architectures, and advanced metrology tools is imperative. This study underscores the transformative potential of 2D semiconductors in enabling post-silicon electronics, contingent upon resolving material-process-device interdependencies.

Copyright

© 2025 The Author(s)

Open Access

Open Access This chapter is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International License (http://creativecommons.org/licenses/by-nc/4.0/), which permits any noncommercial use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made.

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TY  - CONF
AU  - Changsheng Tian
PY  - 2025
DA  - 2025/10/23
TI  - The Application of Two-Dimensional Semiconductor Materials in Digital Integrated Circuits
BT  - Proceedings of the 2025 2nd International Conference on Electrical Engineering and Intelligent Control (EEIC 2025)
PB  - Atlantis Press
SP  - 100
EP  - 107
SN  - 2352-5401
UR  - https://doi.org/10.2991/978-94-6463-864-6_11
DO  - 10.2991/978-94-6463-864-6_11
ID  - Tian2025
ER  -