Proceedings of the 2025 International Conference on Advanced Research in Electronics and Communication Systems (ICARECS-2025)

<Previous Article In Volume
Next Article In Volume>

Design and Investigation of Heavy Ion Radiation Effects of Double Gate Junctionless Tunnel Field Effect Transistor

Authors
S. Karthik1, *, S. Swetha1, S. K. Aadhithyan1, K. Anjani Prasad1
1Department of Electronics and Communication Engineering, SRM Institute of Science and Technology, Vadapalani, Chennai, India
*Corresponding author. Email: karthiks1@srmist.edu.in
Corresponding Author
S. Karthik
Available Online 30 June 2025.
DOI
10.2991/978-94-6463-754-0_64How to use a DOI?
Keywords
DG-JL-TFET; Heavy Ion Radiation Effects; Silicon Germanium; Gallium Arsenide; and LET
Abstract

In this work, TCAD simulations are used to investigate the effects of heavy ion radiation on Double Gate Junctionless Tunnel Field Effect Transistors (DGJL-TFET). Narrow and broad bandgap materials, such as silicon, silicon germanium, and gallium arsenide, are used to examine performance differences under various dose levels of linear energy transfer (LET).The research centers around the impact of radiation on key device characteristics such as threshold voltage stability and peak current degradation through the modification of the electric field distribution, collecting density of charge, and impact ionization. The silicon germanium-based double gate junction-less tunnel field effect transistor is a promising candidate for radiation-hard applications because it possesses higher radiation-resistance-induced instability, as exemplified by a comparative study. The study helps to develop highly reliable electronics for hostile radiation conditions by confirming the resilience of the DG-JL-TFET to be used in space and military applications.

Copyright
© 2025 The Author(s)
Open Access
Open Access This chapter is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International License (http://creativecommons.org/licenses/by-nc/4.0/), which permits any noncommercial use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made.

Download article (PDF)

<Previous Article In Volume
Next Article In Volume>
Volume Title
Proceedings of the 2025 International Conference on Advanced Research in Electronics and Communication Systems (ICARECS-2025)
Series
Atlantis Highlights in Engineering
Publication Date
30 June 2025
ISBN
978-94-6463-754-0
ISSN
2589-4943
DOI
10.2991/978-94-6463-754-0_64How to use a DOI?
Copyright
© 2025 The Author(s)
Open Access
Open Access This chapter is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International License (http://creativecommons.org/licenses/by-nc/4.0/), which permits any noncommercial use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made.

Cite this article

risenwbib
TY  - CONF
AU  - S. Karthik
AU  - S. Swetha
AU  - S. K. Aadhithyan
AU  - K. Anjani Prasad
PY  - 2025
DA  - 2025/06/30
TI  - Design and Investigation of Heavy Ion Radiation Effects of Double Gate Junctionless Tunnel Field Effect Transistor
BT  - Proceedings of the 2025 International Conference on Advanced Research in Electronics and Communication Systems (ICARECS-2025)
PB  - Atlantis Press
SP  - 732
EP  - 743
SN  - 2589-4943
UR  - https://doi.org/10.2991/978-94-6463-754-0_64
DO  - 10.2991/978-94-6463-754-0_64
ID  - Karthik2025
ER  -