Silicon Carbide MOSFET Short-Circuit Protection Strategies

DOI

10.2991/978-94-6463-986-5_85How to use a DOI?

Keywords

SiC MOSFET; Short-circuit protection technology; Fault detection

Abstract

Silicon carbide metal-oxide-semiconductor field-effect transistors, or SiC MOSFETs, have been widely used in high-voltage, high-temperature, and high-frequency power electronic applications due to their superior properties, which include low power loss, high switching frequency, and excellent thermal conductivity. However, compared to conventional silicon-based components, SiC MOSFETs have a substantially shorter short-circuit sustain time. The devices’ dependability is also gravely threatened by the increased electrothermal stress they experience during short circuits, which can result in irreparable damage like gate-source or drain-source short circuits. This paper provides a systematic review of the research advancements in short-circuit protection technologies for SiC MOSFETs: clarify the types and failure mechanisms of short-circuit faults; compare the detection methods based on V_DS、dvDS/dt、I_D、diD/dt、I_G. This paper provides references for the practical application and subsequent research of short-circuit protection technology for SiC MOSFETs. This comprehensive analysis not only enhances the understanding of failure dynamics but also guides the design of more robust protection circuits, thereby improving the reliability and longevity of SiC-based power systems.

Copyright

© 2026 The Author(s)

Open Access

Open Access This chapter is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International License (http://creativecommons.org/licenses/by-nc/4.0/), which permits any noncommercial use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made.

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TY  - CONF
AU  - Hang Yang
PY  - 2026
DA  - 2026/02/18
TI  - Silicon Carbide MOSFET Short-Circuit Protection Strategies
BT  - Proceedings of the 2025 International Conference on Electronics, Electrical and Grid Technology (ICEEGT 2025)
PB  - Atlantis Press
SP  - 833
EP  - 844
SN  - 2352-5401
UR  - https://doi.org/10.2991/978-94-6463-986-5_85
DO  - 10.2991/978-94-6463-986-5_85
ID  - Yang2026
ER  -