Design of a Power Amplifier using MESFET at 2.7GHz ~ 3.1 GHz

DOI

10.2991/icmia-16.2016.3How to use a DOI?

Keywords

power amplifier; S parameter method; Load line method; MESFET

Abstract

In this paper, a linear power amplifier with MESFET tube is simulated and optimized by the application of ADS software and S parameter method. The MESFET tube is a kind of low distortion power FET provided by the company of Excelics and its tag is EFC480C. After optimizing the size of the power amplifier proposed is 15mm×20 mm which is rather small among the similar designs. The gain of the amplifier proposed is over 11 dB at the 2.7GHz ~ 3.1GHz, and the output power (sat) of the amplifier is over 30 dBm. The power fluctuation of the amplifier proposed is less than 1 dB, and the input/output in VSWR is less than 2. The performance of the proposed amplifier is outstanding proved by simulation and testing.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Junsheng Li
AU  - Jian Tang
AU  - Yunhui Jiang
AU  - Fei Yu
PY  - 2016/11
DA  - 2016/11
TI  - Design of a Power Amplifier using MESFET at 2.7GHz ~ 3.1 GHz
BT  - Proceedings of the 2016 5th International Conference on Measurement, Instrumentation and Automation (ICMIA 2016)
PB  - Atlantis Press
SP  - 14
EP  - 18
SN  - 1951-6851
UR  - https://doi.org/10.2991/icmia-16.2016.3
DO  - 10.2991/icmia-16.2016.3
ID  - Li2016/11
ER  -