Enhancing VLSI Performance through Carbon Nanotube Field Effect Transistors

DOI

10.2991/978-94-6463-718-2_128How to use a DOI?

Keywords

CNTFET; VLSI; Ultra-low power; High- performance; Nanotechnology

Abstract

Various phenomena are to be minimized, particularly the loss of bandwidth at the minimum gate for VLSI when the minimum gate length decreases below a limiting length. Which results in lower efficiency and higher baseline power consumption, pointing towards the death knell of Moore’s law. Unlike silicon-based MOSFETs, carbon nanotube field- effect transistors (CNTFETs) are one of the potential candidates for next-generation transistors owing to their improved carrier mobility and reduced power loss. The integration of CNTFETs in VLSI technology is discussed in this work, which had considerable improvement in integration density and enhanced the power dissipation but involved the expensive process of fabrication and stability. Optimized CNTFETs exhibit significant advantages over their counterparts, i.e., MOSFETs, in terms of device modeling, simulations, and technological comparisons. In terms of performance, they provide 18 × faster switching speed, a good on-off current ratio, reaching 10⁶, 28% less dynamic power dissipated, and up to 35% less static power dissipated. In summary, CNTFETs have a significant potential for use in future semiconductor technologies, overcoming the limitations of traditional silicon-based transistors.

Copyright

© 2025 The Author(s)

Open Access

Open Access This chapter is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International License (http://creativecommons.org/licenses/by-nc/4.0/), which permits any noncommercial use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made.

Download article (PDF)

TY  - CONF
AU  - Podili Rahul
AU  - Keesaram Lokesh
AU  - K. Nirmala Devi
PY  - 2025
DA  - 2025/05/23
TI  - Enhancing VLSI Performance through Carbon Nanotube Field Effect Transistors
BT  - Proceedings of the International Conference on Sustainability Innovation in Computing and Engineering (ICSICE 2024)
PB  - Atlantis Press
SP  - 1539
EP  - 1548
SN  - 2352-538X
UR  - https://doi.org/10.2991/978-94-6463-718-2_128
DO  - 10.2991/978-94-6463-718-2_128
ID  - Rahul2025
ER  -