Study of the Radiation Resistance of Silicon Photomultipliers

DOI

10.2991/978-94-6239-668-5_3How to use a DOI?

Keywords

SiPM; silicon photomultiplier; MAPD; micropixel avalanche photodiode; dark current; breakdown voltage

Abstract

Silicon photomultipliers (SiPMs) represent a new generation of solid-state photodetectors that combine high photon detection efficiency, fast response time, and compact design. Owing to these advantages, SiPMs are increasingly being used in applications requiring precise light detection, such as nuclear spectroscopy, positron emission tomography (PET), and high-energy physics experiments. However, when operating in environments with elevated levels of ionizing radiation, their long-term stability and performance can be significantly affected by radiation-induced damage. Therefore, studying their radiation resistance is crucial for ensuring reliable operation in such conditions. In this work, the radiation hardness of SiPM with burried pixel structure (model MAPD-3NK) was investigated under gamma irradiation with absorbed doses ranging from 10 to 100 kGy. The electrical properties were characterized by measuring current–voltage (I–V) and capacitance–voltage (C–V) characteristics before and after irradiation. The experimental results revealed a pronounced increase in dark current with radiation dose as 2.4 times at 10 kGy, 6 times at 40 kGy, and 10.4 times at 100 kGy which attributed to the generation of radiation-induced defects and charge-trapping centers that enhance carrier generation and leakage current. In contrast, the C–V characteristics remained largely unchanged, indicating that the depletion region and junction capacitance were not significantly affected by irradiation. These results demonstrate that MAPD-3NK possess considerable radiation resistance, maintaining their working stability and structural integrity under high-dose exposure. The findings confirm the potential of MAPD-3NK devices for use in radiation-intensive applications, including nuclear instrumentation, high energy physics, and advanced medical imaging systems where robustness against radiation damage is a key performance requirement.

Copyright

© 2026 The Author(s)

Open Access

Open Access This chapter is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International License (http://creativecommons.org/licenses/by-nc/4.0/), which permits any noncommercial use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made.

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TY  - CONF
AU  - Arzu Mammadli
PY  - 2026
DA  - 2026/05/14
TI  - Study of the Radiation Resistance of Silicon Photomultipliers
BT  - Proceedings of the International Conference on Current Problems in Engineering and Applied Sciences (ICCPEAS 2025)
PB  - Atlantis Press
SP  - 13
EP  - 23
SN  - 2352-5401
UR  - https://doi.org/10.2991/978-94-6239-668-5_3
DO  - 10.2991/978-94-6239-668-5_3
ID  - Mammadli2026
ER  -