Photoelectric Energy Conversion at a Metal-CdxHg1-xTe Contact Under Conditions of Heating of Current Carriers by a Strong Electric Field
- DOI
- 10.2991/978-94-6239-668-5_18How to use a DOI?
- Keywords
- metal-semiconductor contact; photo-emf; charge carrier heating
- Abstract
The main features of photoelectric energy conversion at the contact metal (In or Sn)-CdxHg1-xTe (0.25 < х < 0.90 with n- and p-type conductivity) under conditions of heating of free charge carriers in the semiconductor component (CdxHg1-xTe) of contacting pairs (metal-semiconductor) by a strong electric field with ultra-high frequency (with a frequency of 1010 Hz) with a strength from 102 V/cm up to 4 103 V/cm were experimentally investigated. The dependences of the value of the photo-emf (Uph) created under the influence of monochromatic illumination on the contact under study on the intensity (Il) and wavelength of light (λl), the temperature of the sample under study (T0), time (t), the intensity (E) of the microwave electric field with a value greater than a certain critical value (Ecr), i.e. the value of the electric field intensity at which the heating of free charge carriers by the electric field and the effects caused by hot current carriers in the contacting semiconductor component of the contact structure under study begin to be observed were measured experimentally. It is shown that the discovered features of the photo-emf on the studied metal-CdxHg1-xTe contacts under the influence of a strong electric field are directly related to the heating of minority free charge carriers by the electric field in the contacting semiconductor component and the studied metal-CdxHg1-xTe contact structures can be used to create on their basis a new type of highly sensitive, significantly low-inertia photovoltaic energy converters compared to conventional ones.
- Copyright
- © 2026 The Author(s)
- Open Access
- Open Access This chapter is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International License (http://creativecommons.org/licenses/by-nc/4.0/), which permits any noncommercial use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made.
Cite this article
TY - CONF AU - A. Sh. Abdinov AU - S. I. Amirova AU - R. F. Babayeva AU - N. A. Ragimova AU - E. A. Rasulov PY - 2026 DA - 2026/05/14 TI - Photoelectric Energy Conversion at a Metal-CdxHg₁-xTe Contact Under Conditions of Heating of Current Carriers by a Strong Electric Field BT - Proceedings of the International Conference on Current Problems in Engineering and Applied Sciences (ICCPEAS 2025) PB - Atlantis Press SP - 164 EP - 174 SN - 2352-5401 UR - https://doi.org/10.2991/978-94-6239-668-5_18 DO - 10.2991/978-94-6239-668-5_18 ID - Abdinov2026 ER -