Frequency-Dependent Electrical Conductivity of CVD-Grown ZnSe Polycrystals: Analysis Based on Jonscher’s Universal Power Law
- DOI
- 10.2991/978-94-6239-668-5_25How to use a DOI?
- Keywords
- chemical vapor deposition (CVD); X-ray diffraction; Raman spectroscopy; electrical conductivity; optical phonons; optoelectronic materials
- Abstract
The structural, vibrational, and electrical properties of ZnSe crystals grown by chemical vapor deposition (CVD) were investigated. X-ray diffraction analysis confirmed the formation of high-quality cubic sphalerite ZnSe with pronounced (111) crystal texture, submicron crystallite size, and high structural homogeneity. Elemental composition analysis revealed near-stoichiometric ZnSe with minor selenium excess, while Raman spectroscopy identified well-defined transverse (TO) and longitudinal (LO) optical phonon modes, indicating low structural disorder. Impedance spectroscopy showed that the electrical conductivity of ZnSe polycrystals exhibits frequency-dependent dispersive behavior, consistent with hopping conduction of localized carriers. The results demonstrate that CVD-grown ZnSe crystals possess high structural and chemical quality and are promising materials for optoelectronic applications.
- Copyright
- © 2026 The Author(s)
- Open Access
- Open Access This chapter is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International License (http://creativecommons.org/licenses/by-nc/4.0/), which permits any noncommercial use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made.
Cite this article
TY - CONF AU - I. I. Abbasov AU - M. A. Musaev AU - J. I. Huseynov AU - R. B. Aslanov AU - E. A. Eminova PY - 2026 DA - 2026/05/14 TI - Frequency-Dependent Electrical Conductivity of CVD-Grown ZnSe Polycrystals: Analysis Based on Jonscher’s Universal Power Law BT - Proceedings of the International Conference on Current Problems in Engineering and Applied Sciences (ICCPEAS 2025) PB - Atlantis Press SP - 230 EP - 238 SN - 2352-5401 UR - https://doi.org/10.2991/978-94-6239-668-5_25 DO - 10.2991/978-94-6239-668-5_25 ID - Abbasov2026 ER -