Proceedings of the 2025 International Conference on Electronics, Electrical and Grid Technology (ICEEGT 2025)

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Comparative Study of Cutting Methods for Silicon Carbide Wafers

Authors
Yuting Liu1, *
1Glasgow College, University of Electronic Science and Technology of China, 611731, Chengdu, China
*Corresponding author. Email: 2023190501023@std.uestc.edu.cn
Corresponding Author
Yuting Liu
Available Online 18 February 2026.
DOI
10.2991/978-94-6463-986-5_12How to use a DOI?
Keywords
Silicon Carbide; Diamond Wire Saw; Electrical Discharge Machining; EDM; Laser Cutting
Abstract

Silicon-based electronic products are the main devices in the world’s market. However, silicon has a relatively narrow bandgap and it is difficult for silicon-based electronic products to work in extreme environments. Therefore, silicon carbide emerged as the third-generation semiconductor. An important problem in the production of silicon carbide wafers is how to cut such material. This paper reviews three main methods: diamond wire saw cutting, electrical discharge machining (EDM), and laser cutting. As for the depth of the damaged layer, three methods are close to each other, but laser cutting can control the depth with controlled energy. Another factor is thickness. The thickness of the slice is limited when using diamond wire sawing since the width of the wire should be considered, but the other two methods do not restrict the thickness. Future direction for diamond wire sawing is to make the diameter of the wire smaller and the laser pulse width of laser cutting should be lower. EDM is mainly used in the cutting of metal material, whereas for semiconductors it needs more improvement.

Copyright
© 2026 The Author(s)
Open Access
Open Access This chapter is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International License (http://creativecommons.org/licenses/by-nc/4.0/), which permits any noncommercial use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made.

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Volume Title
Proceedings of the 2025 International Conference on Electronics, Electrical and Grid Technology (ICEEGT 2025)
Series
Advances in Engineering Research
Publication Date
18 February 2026
ISBN
978-94-6463-986-5
ISSN
2352-5401
DOI
10.2991/978-94-6463-986-5_12How to use a DOI?
Copyright
© 2026 The Author(s)
Open Access
Open Access This chapter is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International License (http://creativecommons.org/licenses/by-nc/4.0/), which permits any noncommercial use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made.

Cite this article

risenwbib
TY  - CONF
AU  - Yuting Liu
PY  - 2026
DA  - 2026/02/18
TI  - Comparative Study of Cutting Methods for Silicon Carbide Wafers
BT  - Proceedings of the 2025 International Conference on Electronics, Electrical and Grid Technology (ICEEGT 2025)
PB  - Atlantis Press
SP  - 100
EP  - 108
SN  - 2352-5401
UR  - https://doi.org/10.2991/978-94-6463-986-5_12
DO  - 10.2991/978-94-6463-986-5_12
ID  - Liu2026
ER  -