Simulation of Electrical Parameters of MOSFET with Different Gate Dielectric Layers and Substrate Combinations

DOI

10.2991/978-94-6463-986-5_23How to use a DOI?

Keywords

Transistor; Wide bandgap material; High-k material; Composite material simulation

Abstract

In the field of power electronic devices, MOSFET, as a core switching component, is of great significance for improving energy conversion efficiency. Wide bandgap semiconductor substrates (such as SiC and GaN) are taking a dominant position in high-power and high-frequency applications due to their excellent voltage resistance and thermal conductivity. In this paper, the effects of different combinations of gate dielectric layers (HfO₂, Al₂O₃) and substrate materials (Si, SiC, GaN) on the electrical parameters of MOSFETs are investigated by the Sentaurus simulation system. The study adopts the control variable method to comparatively analyze the key performance indexes such as breakdown voltage, on-resistance, threshold voltage, transconductance, cutoff frequency and gate charge. The study reveals the importance of material synergistic optimization for device performance enhancement and provides a theoretical basis for MOSFET design in different application scenarios. In addition, the simulation deviation of the breakdown voltage of GaN devices suggests that the existing model needs to be further improved, and subsequent studies need to be combined with experimental verification to enhance the reliability.

Copyright

© 2026 The Author(s)

Open Access

Open Access This chapter is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International License (http://creativecommons.org/licenses/by-nc/4.0/), which permits any noncommercial use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made.

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TY  - CONF
AU  - Zijie Yin
PY  - 2026
DA  - 2026/02/18
TI  - Simulation of Electrical Parameters of MOSFET with Different Gate Dielectric Layers and Substrate Combinations
BT  - Proceedings of the 2025 International Conference on Electronics, Electrical and Grid Technology (ICEEGT 2025)
PB  - Atlantis Press
SP  - 204
EP  - 216
SN  - 2352-5401
UR  - https://doi.org/10.2991/978-94-6463-986-5_23
DO  - 10.2991/978-94-6463-986-5_23
ID  - Yin2026
ER  -