Analysis and Process Optimization of SiC MOSFET High-Temperature Region Characteristic Degradation Based on Silvaco Atlas

DOI

10.2991/978-94-6463-986-5_22How to use a DOI?

Keywords

SiC MOSFET; High-Temperature Electrical Characteristics; Silvaco ATLAS Simulation; High-Temperature Reliability Optimization

Abstract

With the increasing competition in the international semiconductor industry, SiC MOSFET has become a research focal point in the power semiconductor field due to its material advantages as pivotal role. However, its reliability issues under extreme temperature conditions severely hinder practical applications. This study focuses on analysing the characteristic degradation of SiC MOSFETs in high-temperature zones through Silvaco Atlas simulations. For a start, theoretical analysis was conducted to investigate temperature-dependent variations in transistor threshold voltage, carrier mobility, and device leakage current. The subsequent software simulations confirmed the theoretical analysis and provided insights into the failure mechanisms. Finally, a process optimization method of gate oxygen nitrogen annealing (NO) was proposed to address the issue of interface state traps, and its improvement effect was verified through theoretical analysis and comparison with traditional structures. Although the analysis of optimized device characteristics only stays at the theoretical level, this study has preliminarily completed the simulation analysis of the high-temperature characteristics of SiC MOSFET, laying a theoretical foundation for future high reliability power device design and opening up new directions for interface engineering optimization.

Copyright

© 2026 The Author(s)

Open Access

Open Access This chapter is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International License (http://creativecommons.org/licenses/by-nc/4.0/), which permits any noncommercial use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made.

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TY  - CONF
AU  - Shengxuan Ni
AU  - Zihao Yuan
AU  - Cheng Zhu
PY  - 2026
DA  - 2026/02/18
TI  - Analysis and Process Optimization of SiC MOSFET High-Temperature Region Characteristic Degradation Based on Silvaco Atlas
BT  - Proceedings of the 2025 International Conference on Electronics, Electrical and Grid Technology (ICEEGT 2025)
PB  - Atlantis Press
SP  - 191
EP  - 203
SN  - 2352-5401
UR  - https://doi.org/10.2991/978-94-6463-986-5_22
DO  - 10.2991/978-94-6463-986-5_22
ID  - Ni2026
ER  -