Research on Defect Control Technology of Wide Bandgap Semiconductor Substrates Centered on SiC

DOI

10.2991/978-94-6463-986-5_17How to use a DOI?

Keywords

Wide bandgap semiconductor; Silicon carbide; Defect control

Abstract

This paper integrates various types of literature and describes various defects generated during the crystal growth process. Then the various defects generated were classified into the interior, surface and near-surface of the crystal, and the causes of the defects were described. Secondly, this paper expounds the three stages of SiC substrate manufacturing, namely crystal growth, epitaxial process and post processing, and introduces the defect control technology among them at the same time. Among them, the repeated a-face growth technique (RAF) can effectively reduce the dislocation density through dislocation direction conversion. The solution growth method can convert dislocations in the thermodynamic equilibrium state. Optimizing the flow rate of HCl gas in the epitaxial process can suppress the formation of triangular defects. The improvement of vertical high-speed rotating CVD equipment can enhance the epitaxial uniformity. Furthermore, femtosecond laser technology is highly efficient and low-loss, and annealing technology can indirectly reduce the formation of dislocations. This paper argues that the process equipment can be optimized to reduce defects, and at the same time, the growth rate can be precisely regulated to control the defects.

Copyright

© 2026 The Author(s)

Open Access

Open Access This chapter is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International License (http://creativecommons.org/licenses/by-nc/4.0/), which permits any noncommercial use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made.

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TY  - CONF
AU  - Zejing Liu
AU  - Bingran Qiu
PY  - 2026
DA  - 2026/02/18
TI  - Research on Defect Control Technology of Wide Bandgap Semiconductor Substrates Centered on SiC
BT  - Proceedings of the 2025 International Conference on Electronics, Electrical and Grid Technology (ICEEGT 2025)
PB  - Atlantis Press
SP  - 149
EP  - 158
SN  - 2352-5401
UR  - https://doi.org/10.2991/978-94-6463-986-5_17
DO  - 10.2991/978-94-6463-986-5_17
ID  - Liu2026
ER  -