Proceedings of the 2025 International Conference on Electronics, Electrical and Grid Technology (ICEEGT 2025)

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Analysis of the Advantages and Emerging Applications of ALD Technology in Semiconductor Manufacturing

Authors
Yichen Huang1, Haoyu Sun2, *, Jun Tang3
1School of Physics and Electronic Information, Anhui Normal University, 241000, Wuhu, China
2School of Microelectronics, Guangzhou International Campus, South China University of Technology, 511442, Guangzhou, China
3Southwest Jiaotong University-Leeds Joint School, 610097, Chengdu, China
*Corresponding author. Email: mi202364831341@mail.scut.edu.cn
Corresponding Author
Haoyu Sun
Available Online 18 February 2026.
DOI
10.2991/978-94-6463-986-5_16How to use a DOI?
Keywords
Atomic Layer Deposition (ALD); Self-limiting Surface Reactions; High-k Gate Dielectrics; Diffusion Barrier Layers; Conformal Coating of High-Aspect-Ratio Structures
Abstract

Atomic layer deposition (ALD) technology, based on self-limiting surface reaction mechanisms, can precisely control film growth at the atomic scale and has gradually become a key process in semiconductor manufacturing. This article starts from the basic theory of ALD, compares its differences with traditional chemical vapor deposition (CVD), and focuses on discussing its practical applications in advanced semiconductor processes. The research finds that ALD performs outstandingly in high dielectric constant gate dielectrics (such as HfO2), ultra-high aspect ratio metal interconnect barrier layers, and flexible electronic packaging, especially in conformal coating of complex three-dimensional structures where it is irreplaceable. Although ALD has shortcomings such as low deposition rate and high cost of precursors, its precise control ability at the nanoscale provides important technical support for the development of next-generation semiconductor devices. In the future, by optimizing process efficiency and material compatibility, ALD is expected to further expand its application scenarios in microelectronics and emerging technologies.

Copyright
© 2026 The Author(s)
Open Access
Open Access This chapter is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International License (http://creativecommons.org/licenses/by-nc/4.0/), which permits any noncommercial use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made.

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Volume Title
Proceedings of the 2025 International Conference on Electronics, Electrical and Grid Technology (ICEEGT 2025)
Series
Advances in Engineering Research
Publication Date
18 February 2026
ISBN
978-94-6463-986-5
ISSN
2352-5401
DOI
10.2991/978-94-6463-986-5_16How to use a DOI?
Copyright
© 2026 The Author(s)
Open Access
Open Access This chapter is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International License (http://creativecommons.org/licenses/by-nc/4.0/), which permits any noncommercial use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made.

Cite this article

risenwbib
TY  - CONF
AU  - Yichen Huang
AU  - Haoyu Sun
AU  - Jun Tang
PY  - 2026
DA  - 2026/02/18
TI  - Analysis of the Advantages and Emerging Applications of ALD Technology in Semiconductor Manufacturing
BT  - Proceedings of the 2025 International Conference on Electronics, Electrical and Grid Technology (ICEEGT 2025)
PB  - Atlantis Press
SP  - 140
EP  - 148
SN  - 2352-5401
UR  - https://doi.org/10.2991/978-94-6463-986-5_16
DO  - 10.2991/978-94-6463-986-5_16
ID  - Huang2026
ER  -