Proceedings of the 2025 International Conference on Electronics, Electrical and Grid Technology (ICEEGT 2025)

Research on Advanced Photolithography Technology in Semiconductor Processes

Authors
Changhao Liu1, *
1Applied Physics, Southwest Jiaotong University, 610000, Chengdu, China
*Corresponding author. Email: alei@ldy.edu.rs
Corresponding Author
Changhao Liu
Available Online 18 February 2026.
DOI
10.2991/978-94-6463-986-5_19How to use a DOI?
Keywords
Semiconductor Lithography; Electron Beam Lithography; X-ray Lithography; Extreme Ultraviolet Lithography
Abstract

This paper explores the research progress in advanced lithography techniques for semiconductor manufacturing. As integrated circuit (IC) process nodes advance, traditional optical lithography faces dual challenges of resolution limitations and rising costs. To address these challenges, advanced lithography techniques such as electron beam lithography (EBL) and X-ray lithography (XRL) have been developed. EBL is categorized into direct-write and projection types. Direct-write EBL offers high precision but low throughput, making it suitable for small-batch production, while projection EBL significantly improves throughput. XRL features high resolution and large depth of focus (DOF), but suffers from mask fabrication difficulties and high equipment costs. The paper also analyzes factors affecting yield in lithography, such as proximity effects, and proposes correction methods including exposure parameter adjustments, Optical Proximity Correction (OPC) techniques, and multi-electron beam lithography (MEBL). Finally, the advantages and disadvantages of different lithography technologies are analyzed. It is concluded that EBL achieves high resolution but has low throughput, whereas XRL provides high resolution and large DOF but faces challenges in mask fabrication and high equipment costs.

Copyright
© 2026 The Author(s)
Open Access
Open Access This chapter is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International License (http://creativecommons.org/licenses/by-nc/4.0/), which permits any noncommercial use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made.

Download article (PDF)

Volume Title
Proceedings of the 2025 International Conference on Electronics, Electrical and Grid Technology (ICEEGT 2025)
Series
Advances in Engineering Research
Publication Date
18 February 2026
ISBN
978-94-6463-986-5
ISSN
2352-5401
DOI
10.2991/978-94-6463-986-5_19How to use a DOI?
Copyright
© 2026 The Author(s)
Open Access
Open Access This chapter is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International License (http://creativecommons.org/licenses/by-nc/4.0/), which permits any noncommercial use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made.

Cite this article

TY  - CONF
AU  - Changhao Liu
PY  - 2026
DA  - 2026/02/18
TI  - Research on Advanced Photolithography Technology in Semiconductor Processes
BT  - Proceedings of the 2025 International Conference on Electronics, Electrical and Grid Technology (ICEEGT 2025)
PB  - Atlantis Press
SP  - 168
EP  - 175
SN  - 2352-5401
UR  - https://doi.org/10.2991/978-94-6463-986-5_19
DO  - 10.2991/978-94-6463-986-5_19
ID  - Liu2026
ER  -