Novel Materials for AI Chip - Two-Dimensional Materials and the Third-Generation Semiconductors

DOI

10.2991/978-94-6463-986-5_14How to use a DOI?

Keywords

AI chip; Novel materials; Two-dimensional materials; Third-generation Semiconductors

Abstract

AI chips have a rising demand for high computing power and low power consumption. Traditional silicon-based semiconductors are constrained by inherent properties and process limits, making it difficult to meet the high-performance requirements of AI chips. Therefore the research and exploration of novel materials are particularly significant. This paper focuses on the currently popular two-dimensional (2D) materials and the third-generation semiconductors, deeply analyzing the material properties and comparing four key parameters: bandgap width, electron mobility, thermal conductivity, and breakdown voltage. It is found that graphene has ultra-high electron mobility and thermal conductivity, which can help solve the challenges of high-speed computing and thermal management in AI chips. Molybdenum disulfide with adjustable bandgap width and variable breakdown voltage has excellent switching characteristics, making it suitable for chip memory modules. GaN and SiC can adapt to high-power and high-frequency scenarios by their wide bandgap, high electron mobility and high breakdown voltage characteristics. The four new materials each have their own advantages in physical and electrical properties, demonstrating great application potential in the field of AI chips. If novel materials can overcome the obstacles in manufacturing processes and production costs, they are expected to promote the development of AI chips in the future.

Copyright

© 2026 The Author(s)

Open Access

Open Access This chapter is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International License (http://creativecommons.org/licenses/by-nc/4.0/), which permits any noncommercial use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made.

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TY  - CONF
AU  - Haoru Liu
AU  - Huangshi Su
PY  - 2026
DA  - 2026/02/18
TI  - Novel Materials for AI Chip - Two-Dimensional Materials and the Third-Generation Semiconductors
BT  - Proceedings of the 2025 International Conference on Electronics, Electrical and Grid Technology (ICEEGT 2025)
PB  - Atlantis Press
SP  - 120
EP  - 131
SN  - 2352-5401
UR  - https://doi.org/10.2991/978-94-6463-986-5_14
DO  - 10.2991/978-94-6463-986-5_14
ID  - Liu2026
ER  -