Research on Read Circuits for Wide-temperature STT-MRAM
Authors
Junke Wang1, *
1School of Mechanical and Precision Instrument Engineering, Xi’an University of Technology, Xi’an, 710000, China
*Corresponding author.
Email: 853691335@qq.com
Corresponding Author
Junke Wang
Available Online 23 October 2025.
- DOI
- 10.2991/978-94-6463-864-6_30How to use a DOI?
- Keywords
- STT-MRAM; WIDE-TEMPERATURE; HIGH SENSING MARGIIN
- Abstract
STT-MRAM is considered one of the most promising candidates for emerging memory, sense amplifier and next-generation memory. Temperature greatly affects MRAM performance: reading becomes difficult at high temperatures, and writing becomes hard at low temperatures. This article analyzes in detail the impact of temperature on STT-MRAM and explores read circuits optimized for wide temperature ranges.
- Copyright
- © 2025 The Author(s)
- Open Access
- Open Access This chapter is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International License (http://creativecommons.org/licenses/by-nc/4.0/), which permits any noncommercial use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made.
Cite this article
TY - CONF AU - Junke Wang PY - 2025 DA - 2025/10/23 TI - Research on Read Circuits for Wide-temperature STT-MRAM BT - Proceedings of the 2025 2nd International Conference on Electrical Engineering and Intelligent Control (EEIC 2025) PB - Atlantis Press SP - 289 EP - 303 SN - 2352-5401 UR - https://doi.org/10.2991/978-94-6463-864-6_30 DO - 10.2991/978-94-6463-864-6_30 ID - Wang2025 ER -