Advanced Transistor Technologies and Their Role in Memory Technology Evolution

DOI

10.2991/978-94-6463-864-6_31How to use a DOI?

Keywords

Advanced Cmos Technology; Traditional Memory; Emerging Non-Volatile Memory; Memory Based On Advanced Cmos Technology

Abstract

As the integration process nodes enter the nanoscale, traditional planar transistors face physical limitations due to issues such as short-channel effects and surge leakage currents. This paper systematically analyzes advanced semiconductor device technologies, including Fully Depleted Silicon-On-Insulator (FDSOI), Fin Field Effect Transistor (FinFET), and Gate-All-Around Field Effect Transistor (GAAFET). It elucidates their core mechanisms for suppressing short-channel effects and enhancing efficiency through three-dimensional structures and gate control optimization. Since memory is the current research hotspot of integrated circuits, this paper gives a brief introduction to different traditional and new non-volatile memory. In recent years, there have been more reports on Static Random Access Memory (SRAM), Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) and Resistive Random Access Memory (RRAM) based on advanced CMOS process. These reports demonstrate that SRAM, STT-MRAM and RRAM are highly compatible with advanced CMOS processes. Therefore, this paper further compares the unit area and energy consumption of these three kinds of memory based on advanced process and explores the development trend of memory area and energy consumption with the development of CMOS process.

Copyright

© 2025 The Author(s)

Open Access

Open Access This chapter is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International License (http://creativecommons.org/licenses/by-nc/4.0/), which permits any noncommercial use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made.

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TY  - CONF
AU  - Baiyu Pan
PY  - 2025
DA  - 2025/10/23
TI  - Advanced Transistor Technologies and Their Role in Memory Technology Evolution
BT  - Proceedings of the 2025 2nd International Conference on Electrical Engineering and Intelligent Control (EEIC 2025)
PB  - Atlantis Press
SP  - 304
EP  - 319
SN  - 2352-5401
UR  - https://doi.org/10.2991/978-94-6463-864-6_31
DO  - 10.2991/978-94-6463-864-6_31
ID  - Pan2025
ER  -