Effect of Structural Layer on GaN HEMT Device Performance

DOI

10.2991/978-94-6463-986-5_21How to use a DOI?

Keywords

Semiconductor; GaN HEMT; Device Defects

Abstract

Semiconductor materials have special conductive properties and are widely used in integrated circuits, transistors, optoelectronic devices and other fields. GaN, as one of its representative materials, has made significant progress in material growth and process preparation at present. However, the trap effect caused by structural layer defects during the device fabrication process will affect the performance of the device. This paper first discusses the locations and causes of surface states, interface defects of AlGaN/GaN heterojunctions, and bulk defects. Then, by analyzing existing research results, it elaborates on the impacts of these defects on device performance. Finally, it introduces measures such as GaN cap layers, passivation layers, and field plate structures that can improve defect-related issues and effectively reduce the negative effects of defects on device performance. This study provides a relatively comprehensive introduction to the defects of GaN HEMT and their impacts, and offers ideas for its future technological breakthroughs.

Copyright

© 2026 The Author(s)

Open Access

Open Access This chapter is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International License (http://creativecommons.org/licenses/by-nc/4.0/), which permits any noncommercial use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made.

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TY  - CONF
AU  - Zhuoxin Zhang
PY  - 2026
DA  - 2026/02/18
TI  - Effect of Structural Layer on GaN HEMT Device Performance
BT  - Proceedings of the 2025 International Conference on Electronics, Electrical and Grid Technology (ICEEGT 2025)
PB  - Atlantis Press
SP  - 183
EP  - 190
SN  - 2352-5401
UR  - https://doi.org/10.2991/978-94-6463-986-5_21
DO  - 10.2991/978-94-6463-986-5_21
ID  - Zhang2026
ER  -